vishay tcet111.(g) document number 83546 rev. a3, 18-mar-03 vishay semiconductors www.vishay.com 1 coll. emitter anode cath. c 17918 1 optocoupler with phototransistor output \ features ? ctr offered in 9 groups isolation materials according to ul94-vo pollution degree 2 (din/vde 0110 / resp. iec 664) climatic classification 55/100/21 (iec 68 part 1) special construction: therefore, extra low coupling capacity of typical 0.2 pf, high c ommon m ode r ejection low temperature coefficient of ctr temperature range - 40 to + 110 c coupling system u rated impulse voltage (transient overvoltage) v iotm = 8 kv peak isolation test voltage (partial discharge test volt- age) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak ) rated recurring peak voltage (repetitive) v iorm = 600 v rms creepage current resistance according to vde 0303/iec 112 c omparative t racking i ndex: cti 175 thickness through insulation 0.75 mm internal creepage distance > 4 mm external creepage distance > 8 mm agency approvals bsi: en 60065:2002, en 60950:2000 certificate number 7081 and 7402 fimko (seti): en 60950:2000 certificate number fi 18973 underwriters laboratory (ul) file number e 76222 vde iec 60747 certificate number 115667 applications circuits for safe protective separation against electri- cal shock according to safety class ii (reinforced iso- lation): for appl. class i - iv at mains voltage 300 v for appl. class i - iii at mains voltage 600 v accord- ing to vde 0884, table 2, suitable for: switch-mode power supplies, line receiver, com- puter peripheral interface, microprocessor sys- tem interface, with operating temperature up to 110c description the tcet111.(g) consists of a phototransistor opti- cally coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. the elements are mounted on one lead frame using a coplanar technique , providing a fixed distance between input and output for highest safety require- ments. vde standards these couplers perform safety functions according to the following equipment standards: vde 0884 / iec 60747:2003 optocoupler for electrical safety requirements iec 60950 office machines (applied for reinforced isolation for mains voltage < 400 v rms ) vde 0804 telecommunication apparatus and data processing iec 60065 safety for mains-operated electronic and related household apparatus
www.vishay.com 2 document number 83546 rev. a3, 18-mar-03 vishay tcet111.(g) vishay semiconductors order information g = lead form 10.16 mm; g is not marked on the body, 4 pin = single channel absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause permanent damage to the devise. functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. emitter detector coupler part remarks tcet1110 (g) 50 to 600 % tcet1111 (g) 40 to 80 % tcet1112 (g) 63 to 125 % tcet1113 (g) 100 to 200 % tcet1114 (g) 160 to 320 % tcet1115 (g) 50 to 150 % tcet1116 (g) 100 to 300 % tcet1117 (g) 80 to 160 % tcet1118 (g) 130 to 260 % tcet1119 (g) 200 to 400 % parameter test condition symbol value unit reverse voltage v r 6 v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7 v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c parameter test condition symbol value unit isolation test voltage (rms) t = 1 min v io 5 kv total power dissipation p tot 250 mw operating ambient temperature range t amb - 40 to + 110 c storage temperature range t stg - 55 to + 125 c soldering temperature 2 mm from case t 10 s t sd 260 c
vishay tcet111.(g) document number 83546 rev. a3, 18-mar-03 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. emitter detector coupler current transfer ratio parameter tes t co nd iti on symbol ty p. max unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf parameter tes t co nd iti on symbol min ty p. max unit collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7 v collector emitter cut-off current v ce = 20 v, i f = 0, e = 0 i ceo 10 100 na parameter tes t co nd iti on symbol ty p. max unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 ? f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf parameter tes t co nd iti on part symbol min ty p. max unit i c /i f v ce = 5 v, i f = 1 ma tcet1111 (g) ctr 0.13 0.30 % v ce = 5 v, i f = 1 ma tcet1112 (g) ctr 0.22 0.45 % v ce = 5 v, i f = 1 ma tcet1113 (g) ctr 0.34 0.70 % v ce = 5 v, i f = 1 ma tcet1114 (g) ctr 0.56 0.90 % v ce = 5 v, i f = 5 ma tcet1110 (g) ctr 0.50 6.0 % v ce = 5 v, i f = 5 ma tcet1115 (g) ctr 0.5 1.5 % v ce = 5 v, i f = 5 ma tcet1116 (g) ctr 1.0 3.0 % v ce = 5 v, i f = 5 ma tcet1117 (g) ctr 0.8 1.6 % v ce = 5 v, i f = 5 ma tcet1118 (g) ctr 1.3 2.6 % v ce = 5 v, i f = 5 ma tcet1119 (g) ctr 2.0 4.0 % v ce = 5 v, i f = 10 ma tcet1111 (g) ctr 0.40 0.8 % v ce = 5 v, i f = 10 ma tcet1112 (g) ctr 0.63 1.25 % v ce = 5 v, i f = 10 ma tcet1113 (g) ctr 1.0 2.0 % v ce = 5 v, i f = 10 ma tcet1114 (g) ctr 1.6 3.2 %
www.vishay.com 4 document number 83546 rev. a3, 18-mar-03 vishay tcet111.(g) vishay semiconductors maximum safety ratings (according to vde 0884) see figure 1 this optocoupler is suitable for safe electrical isolation only within the safety ratings. compliance with the safety ratings shall be ensured by means of suitable protective circuits. emitter detector coupler insulation rated parameters parameter symbol max unit forward current i f 130 ma parameter symbol max unit power dissipation p diss 265 mw parameter symbol max unit rated impulse voltage v iotm 8 kv safety temperature t si 150 c parameter test condition symbol min unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test), (see figure 2) t tr = 60 s, t test = 10 s v iotm 8 kv t tr = 60 s, t test = 10 s v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? v io = 500 v, t amb = 150 c (construction test only) r io 10 9 ? figure 1. derating diagram 0 25 50 75 125 0 50 100 150 200 300 p ? total power dissipation ( mw ) tot t si ? safety temperature ( c ) 150 94 9182 100 250 phototransistor psi ( mw ) ir-diode isi ( ma ) figure 2. test pulse diagram for sample test according to din vde 0884; iec60747 t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
vishay tcet111.(g) document number 83546 rev. a3, 18-mar-03 vishay semiconductors www.vishay.com 5 switching characteristics parameter tes t co nd iti on symbol ty p. unit delay time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t d 3.0 s rise time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t r 3.0 s turn-on time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t on 6.0 s storage time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t s 0.3 s fall time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t f 4.7 s turn-off time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t off 5.0 s turn-on time see figure 4) v s = 5 v, i f = 10 ma, r l = 1 k ? t on 9.0 s turn-off time see figure 4) v s = 5 v, i f = 10 ma, r l = 1 k ? t off 10.0 s figure 3. test circuit, non-saturated operation figure 4. test circuit, saturated operation channel i channel ii 95 10804 r g = 50 t p t p = 50 p s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adjusted through input amplitude oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g = 50 t p t p = 50 p s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l t 1 m c l d 20 pf figure 5. switching times t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d +t r ) turn-on time t s storage time t f fall time t off (= t s +t f ) turn-of f time
www.vishay.com 6 document number 83546 rev. a3, 18-mar-03 vishay tcet111.(g) vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 6. total power dissipation vs. ambient temperature figure 7. forward current vs. forward voltage figure 8. relative current transfer ratio vs. ambient temperature 0 50 100 150 200 250 300 0 20406080100120 t amb ? ambient temperature ( c ) 16736 p ?total power dissipation ( mw ) tot coupled device phototransistor ir?diode 0.1 1.0 10.0 100.0 1000.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f ? forward voltag e(v) 96 11862 f i ? forward current ( ma) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 ?40 ?20 0 20 40 60 80 100 120 t amb ? ambient temperature ( c ) 16737 vce = 5 v if = 5 ma ctr ? relative current transfer ratio rel figure 9. collector dark current vs. ambient temperature figure 10. collector current vs. forward current figure 11. collector current vs. collector emitter voltage 1.00 10.00 100.00 1000.00 10000.00 0 20406080100120 1.00 10.00 100.00 1000.00 10000.00 0 t amb ? ambient temperature ( c ) 10000 1000 100 10 1 i ? collector dark current, ceo with open base ( na ) v ce = 30 v 10 v 16738 0.1 1 10 0.01 0.1 1 100 i ? collector current ( ma ) c i f ? forward current ( ma ) 100 95 11027 10 v ce =5v 0.1 1 10 0.1 1 10 100 v ce ? collector emitter voltag e(v) 100 95 10985 i ? collector current ( ma) c i f =50ma 5ma 2ma 1ma 20ma 10ma
vishay tcet111.(g) document number 83546 rev. a3, 18-mar-03 vishay semiconductors www.vishay.com 7 figure 12. collector emitter saturation voltage vs. collector current figure 13. current transfer ratio vs. forward current figure 14. turn on / off time vs. collector current 110 0 0.2 0.4 0.6 0.8 1.0 v ? collector emitter saturation voltage (v) cesat i c ? collector current ( ma ) 100 ctr=50% 20% 10% 95 11028 0.1 1 10 1 10 100 1000 ctr ? current transfer ratio ( % ) i f ? forward current ( ma ) 100 95 11029 v ce =5v 02 4 6 0 2 4 6 8 10 i c ? collector current ( ma ) 10 95 11030 t / t ?turn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 ? t off t on figure 15. turn on / off time vs. forward current figure 16. marking example 0 5 10 15 0 10 20 30 40 50 i f ? forward current ( ma ) 20 95 11031 t / t ?turn on / turn off time ( s ) off on saturated operation v s =5v r l =1k ? t off t on et1110 v 223 u63 type date code coupling system indicator company logo production location 16745 pin1 indication (ym)
www.vishay.com 8 document number 83546 rev. a3, 18-mar-03 vishay tcet111.(g) vishay semiconductors package dimension of tcet111. in mm package dimension of tclt11.g in mm 14789 14792
vishay tcet111.(g) document number 83546 rev. a3, 18-mar-03 vishay semiconductors www.vishay.com 9 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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